Calcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ±0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO 4], [CuO11], [CuO11Vx 0] and [TiO5.VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. © 2013 Elsevier B.V. All rights reserved.