CaCu3Ti4O12 thin films with non-linear resistivity deposited by RF-sputtering

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorFoschini, C. R.
dc.creatorTararam, R.
dc.creatorSimões, A. Z.
dc.creatorCilense, M.
dc.creatorLongo, Elson
dc.creatorVarela, José Arana
dc.date2014-05-27T11:29:57Z
dc.date2016-10-25T18:51:09Z
dc.date2014-05-27T11:29:57Z
dc.date2016-10-25T18:51:09Z
dc.date2013-07-11
dc.date.accessioned2017-04-06T02:30:54Z
dc.date.available2017-04-06T02:30:54Z
dc.identifierJournal of Alloys and Compounds, v. 574, p. 604-608.
dc.identifier0925-8388
dc.identifierhttp://hdl.handle.net/11449/75949
dc.identifierhttp://acervodigital.unesp.br/handle/11449/75949
dc.identifier10.1016/j.jallcom.2013.05.216
dc.identifierWOS:000321749600097
dc.identifier2-s2.0-84879825033
dc.identifierhttp://dx.doi.org/10.1016/j.jallcom.2013.05.216
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/896672
dc.descriptionCalcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ±0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO 4], [CuO11], [CuO11Vx 0] and [TiO5.VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. © 2013 Elsevier B.V. All rights reserved.
dc.languageeng
dc.relationJournal of Alloys and Compounds
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectChemical synthesis
dc.subjectElectron microscopy
dc.subjectThin films
dc.subjectX-ray diffraction
dc.subjectCalcium copper titanates
dc.subjectConventional furnace
dc.subjectCubic structure
dc.subjectDielectric permittivities
dc.subjectInterfacial barriers
dc.subjectPolycrystalline
dc.subjectRoom temperature
dc.subjectSecondary phasis
dc.subjectDielectric losses
dc.subjectPermittivity
dc.subjectSynthesis (chemical)
dc.subjectX ray diffraction
dc.titleCaCu3Ti4O12 thin films with non-linear resistivity deposited by RF-sputtering
dc.typeOtro


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