Otro
Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
Registro en:
IEEE International Conference on Conduction & Breakdown in Solid Dielectrics, p. 508-512.
10.1109/ICSD.1995.523038
WOS:A1995BD97L00099
2-s2.0-0029483857
Autor
do Prado, A. J.
Astorga, O. A M
Resumen
An experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.