dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatordo Prado, A. J.
dc.creatorAstorga, O. A M
dc.date2014-05-27T11:18:02Z
dc.date2016-10-25T18:13:39Z
dc.date2014-05-27T11:18:02Z
dc.date2016-10-25T18:13:39Z
dc.date1995-12-01
dc.date.accessioned2017-04-06T00:46:33Z
dc.date.available2017-04-06T00:46:33Z
dc.identifierIEEE International Conference on Conduction & Breakdown in Solid Dielectrics, p. 508-512.
dc.identifierhttp://hdl.handle.net/11449/64674
dc.identifierhttp://acervodigital.unesp.br/handle/11449/64674
dc.identifier10.1109/ICSD.1995.523038
dc.identifierWOS:A1995BD97L00099
dc.identifier2-s2.0-0029483857
dc.identifierhttp://dx.doi.org/10.1109/ICSD.1995.523038
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/886474
dc.descriptionAn experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.
dc.languageeng
dc.relationIEEE International Conference on Conduction & Breakdown in Solid Dielectrics
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAlgorithms
dc.subjectApproximation theory
dc.subjectComputational methods
dc.subjectComputer simulation
dc.subjectElectric discharges
dc.subjectElectric resistance
dc.subjectFlashover
dc.subjectGeometry
dc.subjectMathematical models
dc.subjectPollution
dc.subjectHigh voltage polluted insulators
dc.subjectObenaus model
dc.subjectVoltage polarity
dc.subjectElectric insulating materials
dc.titleModelling of the influence of the layer pollution thickness in high voltage polluted insulators
dc.typeOtro


Este ítem pertenece a la siguiente institución