Physical principles of memory and logic devices based on nanostructured Dirac materials

Abstract

During the las decades, the silicon-based semiconductor industry has enabled higher performance per cost of integrated circuits due to the ability of nearly doubling the amount of transistors per chip every two years, however, this has resulted in overheating issues and fundamental manufacturing problems that are very di¿cult to solve. Therefore, Dirac materials (DMs), such as graphene and topological insulators (TIs), are being extensively investigated as possible candidates for replacing silicon-channel devices in the next-generation integrated circuits, due to their attractive ultrahigh carrier mobility and possibility of quantum e¿ects that may be useful for electronic applications. This requires to study the physical principles of such nanostructures to e¿ectivelypredictthequantumtransportbehaviorofpossibledevices. Theaimofthis work is to explore the physical properties of Dirac material-based nanostructures that could be used for novel memory and logic devices, by using tight-binding (TB) and density function theory (DFT) methods combined with the non-equilibrium function (NEGF) formulation