The presented work meets the requirements for integration of amorphous silicon carbon films with silicon technology in order to obtain a complete optoelectronic system such as light emitting diodes and its electronic readout circuits. The key enabler for this integration scheme is the low temperature of deposition of a‐SiC:H films and an ohmic behavior in the interface metal/a‐SiC:H. In this work, the optimization of the interface Al/a‐SiC:H films are performed by means of thermal annealing timing. The a‐SiC:H films were deposited by enhanced chemical vapor deposition from CH4/SiH4 and C2H2/SiH4 mixtures. The structural and optical properties of the deposited films are presented. An implantation phosphorous dose was used for doping before fabrication of patterned aluminum contacts. The implanted films were electrically characterized by the transfer length method (TLM) measuring a sheet resistance value as low as 171 MΩ/square. The Schottky behavior was improved to ohmic behavior after several hours in thermal annealing treatments at 350 °C, which allows to obtain a reasonable contact resistance values in the range from 8.6 to 26.8 kΩ.