Photoconduction properties of silicon rich oxide SRO thin films were studied under different illumination conditions. In the past, Al/SRO/Si structures showed a high photocurrent in spite of the fact that an opaque Al layer was on the active area. In order to elucidate this observation, new Al/SRO/Si structures were tested, but this time they were also measured horizontally. SRO thin films were deposited on silicon wafers by low pressure chemical vapor deposition technique using SiH4 silane and N2O nitrous oxide as reactive gases at 700 °C. 1%–12% silicon excess was used. Structures with a single SRO layer and with a double layer were fabricated in order to have a barrier to isolate the silicon from the active SRO layer. The results show that all structures have a higher current when light shines on them than when they are in the dark. It is proposed that the photocurrent is produced in the SRO bulk, and an explanation for these observations is given.