dc.creatorLomelí-Illescas, Ismael
dc.creatorSolís-Bustos, Sergio A.
dc.creatorRayas-Sánchez, José E.
dc.date2019-08-30T18:29:25Z
dc.date2019-08-30T18:29:25Z
dc.date2017-03
dc.date.accessioned2023-07-21T22:11:39Z
dc.date.available2023-07-21T22:11:39Z
dc.identifierI. Lomelí-Illescas, S. A. Solís-Bustos, and J. E. Rayas-Sánchez, “Analysis of the implications of stacked devices in nano-scale technologies for analog applications,” in IEEE Latin American Test Symp. (LATS-2017), Bogota, Colombia, Mar. 2017, pp. 1-4. DOI: 10.1109/LATW.2017.7906750
dc.identifier2373-0862
dc.identifierhttp://hdl.handle.net/11117/6006
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7761440
dc.descriptionIn this work, a methodology to assess the implications on the performance of analog circuits due to the use of stacked devices in current nano-scale technologies is presented. To evaluate the usage of stacked devices, the characteristic curves of transistors implemented with a different amount of transistors in stack are obtained and compared to those of a single device. The effects of using stacked devices are further studied with the implementation of a current mirror and the implementation of two different layout topologies, discussing their tradeoffs, advantages and drawbacks. Our methodology facilitates designers to develop a good understanding of the characteristics and limitations of a particular physical design before silicon is back for laboratory testing.
dc.formatapplication/pdf
dc.languageeng
dc.publisherIEEE
dc.rightshttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdf
dc.subjectAnalog Layout
dc.subjectChannel Modulation
dc.subjectInterdigitated Layout
dc.subjectLeakage
dc.subjectStacked Devices
dc.subjectStack Effect
dc.titleAnalysis of the Implications of Stacked Devices in Nano-Scale Technologies for Analog Applications
dc.typeinfo:eu-repo/semantics/article


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