Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy

dc.creatorAdelmann, Christoph
dc.creatorMartínez-Guerrero, Esteban
dc.creatorMariette, H.
dc.creatorFeuillet, Guy
dc.creatorDaudin, B.
dc.date2013-06-14T14:11:02Z
dc.date2013-06-14T14:11:02Z
dc.date1999-10-15
dc.date.accessioned2023-07-21T22:05:23Z
dc.date.available2023-07-21T22:05:23Z
dc.identifierC. Adelmann, E. Martinez-Guerrero, H. Mariette, G. Fuillet, and B. Daudin, Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy, J. Appl. Phys. Vol. 86, No. 8, pp 4322 - 4325, (1999)
dc.identifier0021-8979
dc.identifierhttp://hdl.handle.net/11117/651
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7759178
dc.descriptionThe kinetic changes in the growth of GaN induced by the presence of In segregated on the surface has been investigated in-situ by using high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely Ga-polar (0001) wurzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth.
dc.descriptionConsejo Nacional de Ciencia y Tecnología
dc.formatapplication/pdf
dc.languageeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relationJournal of Applied Physics;8
dc.rightshttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdf
dc.subjectGaN
dc.subjectGa-polar Wurzite
dc.subjectZinc Blende
dc.titleIndium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy
dc.typeinfo:eu-repo/semantics/article


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