GaN Quantum Dots: Physics and Applications

dc.creatorDang, Le Si
dc.creatorFishman, G.
dc.creatorMariette, H.
dc.creatorAdelmann, Christoph
dc.creatorMartínez-Guerrero, Esteban
dc.creatorSimon, Julia
dc.creatorDaudin, B.
dc.creatorMonroy, E.
dc.creatorPelekanos, N.T.
dc.creatorRouvière, J.L.
dc.creatorCho, Y.H.
dc.date2013-06-14T15:09:46Z
dc.date2013-06-14T15:09:46Z
dc.date2003-02-14
dc.date.accessioned2023-07-21T21:53:58Z
dc.date.available2023-07-21T21:53:58Z
dc.identifierLe Si Dang, G. Fishman and H. Mariette, C. Adelmann, E. Martinez, J. Simon, B. Daudin, E. Monroy, N. Pelekanos and J. L. Rouviere, and Y. H. Cho, GaN Quantum Dots: Physics and Applications, Journal of the Korean Physical Society, Vol. 42, pp. S657-S661, (2003)
dc.identifierhttp://hdl.handle.net/11117/656
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7754607
dc.descriptionRecent works by our group on hexagonal and cubic GaN/AlN quantum dots grown by molecular beam epitaxy are reviewed. It is shown that the growth of GaN on AlN can occur either in a layerby- layer mode to form quantum wells or in the Stranski-Krastanow mode to form self-assembled quantum dots. High resolution transmission electron microscopy reveals that quantum dots are truncated pyramids (typically 3 nm high and 15 nm wide), nucleating on top of a wetting layer. The existence of internal electric elds of 7 MV/cm in hexagonal quantum dots is evidenced by observations of various physical e ects related to the quantum con ned Stark e ect, e.g. energy redshift of the interband transition, decrease of its oscillator strength, or enhancement of the exciton interaction with LO phonons. Prospects for UV and near-IR applications, using interband and intersubband transitions of GaN/AlN quantum dots, respectively, will be discussed also in this presentation.
dc.descriptionRegion Rhône-Alpes
dc.formatapplication/pdf
dc.languageeng
dc.publisherKorean Physical Society
dc.relationJournal of the Korean Physical Society;Vol. 42
dc.rightshttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdf
dc.subjectSelf-assembled Quantum Dot
dc.subjectNitride Semiconductors
dc.subjectExcitons
dc.subjectQuantum Confined Stark Effect
dc.subjectTEM
dc.subjectPhotoluminiscence
dc.subjectCathodoluminiscence
dc.subjectUV Laser
dc.titleGaN Quantum Dots: Physics and Applications
dc.typeinfo:eu-repo/semantics/article


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