| dc.contributor | American Institute of Physics | |
| dc.creator | Compeán García, Vicente Damián | |
| dc.creator | Orozco Hinostroza, Ignacio Everardo | |
| dc.creator | Escobosa Echavarria, Arturo | |
| dc.creator | López Luna, Edgar | |
| dc.creator | Rodríguez Vázquez, Angel Gabriel | |
| dc.date | 2018-04-03T19:23:00Z | |
| dc.date | 2018-04-03T19:23:00Z | |
| dc.date | 2014-05 | |
| dc.date.accessioned | 2023-07-17T22:04:40Z | |
| dc.date.available | 2023-07-17T22:04:40Z | |
| dc.identifier | V. D. Compeán García, et al.. Applied Physics Letters 104, 191904 (2014); https://doi.org/10.1063/1.4876760 © 2014 AIP Publishing LLC. | |
| dc.identifier | http://hdl.handle.net/11627/3745 | |
| dc.identifier | https://doi.org/10.1063/1.4876760 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7544058 | |
| dc.description | "High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [01 (1) over bar0] azimuth and a superimposed diffraction along the [11 (2) over bar0] azimuth, which correspond to a 30 degrees alpha-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of a-InN was observed and was centered at 2 theta = 31.4 degrees. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm(-1) and E2(high) at 488 cm(-1). Hall effect measurements showed a carrier density of 9 x 10(18) cm(-3) and an electron Hall mobility of 340 cm (2)/(V s) for a film thickness of 140 nm." | |
| dc.format | application/pdf | |
| dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0/ | |
| dc.rights | Acceso Abierto | |
| dc.subject | FÍSICA | |
| dc.title | High-quality InN films on MgO (100) substrates: the key role of 30 degrees in-plane rotation | |
| dc.type | article | |
