| dc.contributor | Lastras Martinez, Alfonso | |
| dc.creator | Armenta Franco, Abril | |
| dc.date | 2020-07-23T14:01:22Z | |
| dc.date | 2020-07-23T14:01:22Z | |
| dc.date | 2018 | |
| dc.date.accessioned | 2023-07-17T20:32:16Z | |
| dc.date.available | 2023-07-17T20:32:16Z | |
| dc.identifier | https://repositorioinstitucional.uaslp.mx/xmlui/handle/i/5792 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7517316 | |
| dc.description | Reflectance Difference Spectroscopy (RDS) is an in-situ and in real-time measurement technique
used to study optical anisotropies during InAs/GaAs(001) growth. Studies were performed
in a Molecular Beam Epitaxy (MBE) ultra-high vaccum chamber under different As
overpressures and several substrate temperatures. Reflectance Difference Spectroscopy was
used to acquire the experimental data, which were measured with an acquisition time of 100
ms. As a mathematical tool, Singular Value Decomposition (SVD) was used to analyse the measured
spectra in order to obtain representative bases Si(E) which with a linear combination of
them, each of the spectra (S(E,t)) is reproduced. S(E,t)=
Pi
1 ci(t)Si(E) is the mathematical representation
of the fittings for each experimental measured data. Physical Models such as Strain
are used to fit the obtained representative bases. | |
| dc.description | Grupos de la comunidad | |
| dc.description | Investigadores | |
| dc.description | Estudiantes | |
| dc.format | application/pdf | |
| dc.format | application/pdf | |
| dc.language | Inglés | |
| dc.relation | Facultad de Ciencias | |
| dc.rights | Acceso Abierto | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | Semiconductores | |
| dc.subject | CIENCIAS FÍSICO MATEMATICAS Y CIENCIAS DE LA TIERRA | |
| dc.subject | INGENIERÍA Y TECNOLOGÍA | |
| dc.title | inas/gaas heteroepitaxy: real-time reflectance-anisotropy spectroscopy | |
| dc.type | Tesis de doctorado | |
| dc.coverage | México. San Luis Potosí. San Luis Potosí | |
