| dc.contributor | Dores, J.M., INESC-ID/Instituto Superior Técnico, TU Lisbon, Lisbon, Portugal; Becerra-Alvarez, E.C., Institute of Microelectronics of Seville, IMSE-CNM (CSIC/University of Seville), Seville, Spain, CUCEI, University of Guadalajara, Guadalajara, Mexico; Martins, M.A., INESC-ID/Instituto Superior Técnico, TU Lisbon, Lisbon, Portugal, TES Electronic Solutions, Berlin, Germany; De La Rosa, J.M., Institute of Microelectronics of Seville, IMSE-CNM (CSIC/University of Seville), Seville, Spain; Fernandes, J.R., INESC-ID/Instituto Superior Técnico, TU Lisbon, Lisbon, Portugal | |
| dc.description.abstract | This paper presents a comparative study among different biasing circuits of inductorless low-area Low Noise Amplifier (LNAs) with feedback. This study intends to determine the most suitable biasing circuit to achieve the best LNA performance for wideband applications. The main performance metrics are analyzed and a comparison is carried out based on electrical simulations. To this purpose, two different CMOS technology processes are considered: 130 nm and 90 nm. In both cases, the supply voltage is 1.2 V. The best LNA designed in 130 nm achieves a bandwidth of 2.94 GHz with a flat voltage gain (A v) of 16.5 dB and a power consumption of 3.2 mW. The same LNA topology designed in 90 nm technology has a bandwidth of 11.2 GHz, featuring a voltage gain of 16.6 dB and consuming 1.9 mW. Both LNAs are input-impedance matched and have a noise figure below 2.4 dB measured at 2.4 GHz. As a case study, the layout of the best-performance LNA circuit has been implemented in a 130 nm technology, achieving an area of 0.012 mm 2, which is near the size of a pad or an inductor. It is demonstrated that the bandwidth of this circuit can be notably increased by simply adding a small inductance in the feedback path. 1 © 2012 Elsevier Ltd. | |
