dc.contributorDores, J.M., Analog and Mixed Circuit Group, INESC-ID/TU Lisbon, Lisbon, Portugal; Alvarez, E.B., Institute of Microelectronics of Seville, IMSE-CNM (CSIC/University of Seville), Seville, Spain, CUCEI, University of Guadalajara, Guadalajara, Mexico; Martins, M.A., Analog and Mixed Circuit Group, INESC-ID/TU Lisbon, Lisbon, Portugal; De La Rosa, J.M., Institute of Microelectronics of Seville, IMSE-CNM (CSIC/University of Seville), Seville, Spain; Fernandes, J.R., Analog and Mixed Circuit Group, INESC-ID/TU Lisbon, Lisbon, Portugal
dc.creatorDores, J.M.
dc.creatorAlvarez, E.B.
dc.creatorMartins, M.A.
dc.creatorDe La Rosa, J.M.
dc.creatorFernandes, J.R.
dc.date.accessioned2015-11-18T23:43:17Z
dc.date.accessioned2023-07-03T21:33:29Z
dc.date.available2015-11-18T23:43:17Z
dc.date.available2023-07-03T21:33:29Z
dc.date.created2015-11-18T23:43:17Z
dc.date.issued2011
dc.identifierhttp://hdl.handle.net/20.500.12104/62747
dc.identifier10.1109/MWSCAS.2011.6026435
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-80053633305&partnerID=40&md5=c1f4b8eb724aa457a1a0800b3819d167
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7241730
dc.description.abstractIn this paper we present a comparative study of different biasing versions of an inductorless low-area Low Noise Amplifier (LNA). With this study, we intend to determine the most suitable biasing circuit to achieve the best LNA performance. The LNAs under study are simulated in two different CMOS processes, 130 nm and 90 nm. The supply voltage is 1.2 V. The best LNA implemented in 130 nm achieves a bandwidth of 2.94 GHz with a flat voltage gain (A v) of 16.5 dB and a power consumption of 3.2 mW. The same LNA topology implemented in 90 nm technology has a bandwidth of 11.2 GHz, voltage gain of 16.6 dB and consumes 1.9 mW. Both LNAs have input impedance matching and have a noise figure below 2.4 dB at 2.4 GHz. © 2011 IEEE.
dc.relationMidwest Symposium on Circuits and Systems
dc.relationScopus
dc.titleA comparative study of biasing circuits for an inductorless wideband low noise amplifier
dc.typeConference Paper


Este ítem pertenece a la siguiente institución