dc.date.accessioned | 2021-08-23T22:51:50Z | |
dc.date.accessioned | 2022-10-19T00:18:51Z | |
dc.date.available | 2021-08-23T22:51:50Z | |
dc.date.available | 2022-10-19T00:18:51Z | |
dc.date.created | 2021-08-23T22:51:50Z | |
dc.date.issued | 2016 | |
dc.identifier | http://hdl.handle.net/10533/250851 | |
dc.identifier | 1150806 | |
dc.identifier | WOS:000370755900001 | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/4482114 | |
dc.description.abstract | Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number n(M) = -2, but not a Z(2) strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation. | |
dc.language | eng | |
dc.relation | https://doi.org/10.1038/srep21790 | |
dc.relation | handle/10533/111557 | |
dc.relation | 10.1038/srep21790 | |
dc.relation | handle/10533/111541 | |
dc.relation | handle/10533/108045 | |
dc.rights | info:eu-repo/semantics/article | |
dc.rights | info:eu-repo/semantics/openAccess | |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 Chile | |
dc.rights | http://creativecommons.org/licenses/by-nc-nd/3.0/cl/ | |
dc.title | Topological Crystalline Insulator in a New Bi Semiconducting Phase | |
dc.type | Articulo | |