dc.date.accessioned2021-08-23T22:51:50Z
dc.date.accessioned2022-10-19T00:18:51Z
dc.date.available2021-08-23T22:51:50Z
dc.date.available2022-10-19T00:18:51Z
dc.date.created2021-08-23T22:51:50Z
dc.date.issued2016
dc.identifierhttp://hdl.handle.net/10533/250851
dc.identifier1150806
dc.identifierWOS:000370755900001
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4482114
dc.description.abstractTopological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number n(M) = -2, but not a Z(2) strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.
dc.languageeng
dc.relationhttps://doi.org/10.1038/srep21790
dc.relationhandle/10533/111557
dc.relation10.1038/srep21790
dc.relationhandle/10533/111541
dc.relationhandle/10533/108045
dc.rightsinfo:eu-repo/semantics/article
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Chile
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/
dc.titleTopological Crystalline Insulator in a New Bi Semiconducting Phase
dc.typeArticulo


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