info:eu-repo/semantics/article
Photocurrent decay from the steady-state in thin film hydrogenated amorphous silicon: Numerical simulation analysis of experimental results
Fecha
2020-10Registro en:
Schmidt, Javier Alejandro; Goldie, David; Photocurrent decay from the steady-state in thin film hydrogenated amorphous silicon: Numerical simulation analysis of experimental results; Elsevier Science SA; Thin Solid Films; 696; 10-2020; 1377931-1377937
0040-6090
CONICET Digital
CONICET
Autor
Schmidt, Javier Alejandro
Goldie, David
Resumen
Starting from the multiple trapping rate equations that define the non-equilibrium concentrations of electrons and holes in extended states, the experiment of photocurrent decay from the steady-state is examined. A system of non-linear coupled differential equations is solved to get the temporal evolution of the occupation functions and the carrier concentrations after cessation of the illumination. Different expressions proposed in the literature to evaluate the carrier lifetimes from the photocurrent decay data are critically examined. Measurements performed on a series of hydrogenated amorphous silicon samples deposited at different substrate temperatures are reproduced by the simulations. It is found that the response time determined from the photocurrent initial rate-of-decay provides an excellent estimation of the free lifetime of the majority carrier, provided the decay is recorded from sufficiently short times. It is also found that the common recombination lifetime can also be estimated from the photocurrent decay data.