info:eu-repo/semantics/article
Ballistic transport properties in pristine/doped/ pristine graphene junctions
Fecha
2014-08Registro en:
Ardenghi, Juan Sebastian; Bechthold, Pablo Ignacio; Gonzalez, Estela Andrea; Jasen, Paula Verónica; Juan, Alfredo; Ballistic transport properties in pristine/doped/ pristine graphene junctions; Academic Press Ltd - Elsevier Science Ltd; Superlattices And Microstructures; 72; 8-2014; 325-335
0749-6036
CONICET Digital
CONICET
Autor
Ardenghi, Juan Sebastian
Bechthold, Pablo Ignacio
Gonzalez, Estela Andrea
Jasen, Paula Verónica
Juan, Alfredo
Resumen
We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the concentration of impurities and the incident energy. In turn, the conductance computed using the Landauer formalism shows a similar behavior to those found in experimental works as a function of the applied voltage for different concentrations of impurities in the limit of low temperatures. In the limit of zero bias voltage, the conductance shows a minimum value which reduces to zero for high concentration of impurities which disentangle graphene sublattices. These results can be very helpful for exploring the tunneling mechanism of electrons through doped thermodynamically stable graphene.