info:eu-repo/semantics/article
Characterization of graphene grown by direct-liquid-injection chemical vapor deposition with cyclohexane precursor in N2 ambient
Fecha
2020-04Registro en:
Intaro, T.; Hodak, Jose Hector; Suwanyangyaun, P.; Botta, Raju; Nuntawong, N.; et al.; Characterization of graphene grown by direct-liquid-injection chemical vapor deposition with cyclohexane precursor in N2 ambient; Elsevier Science SA; Diamond And Related Materials; 104; 107717; 4-2020; 1-10
0925-9635
CONICET Digital
CONICET
Autor
Intaro, T.
Hodak, Jose Hector
Suwanyangyaun, P.
Botta, Raju
Nuntawong, N.
Niki, Masaya
Kosuga, S.
Watanabe, T.
Koh, S.
Taychatanapat, T.
Sanorpim, S.
Resumen
We synthesize graphene films by direct-liquid-injection chemical vapor deposition (DLI-CVD) method with cyclohexane precursor (C6H12) in N2 ambient. This process offers a safer, and more economical route for large-scale graphene production in which hydrogen gas is not required. Graphene films are grown on Cu foil substrates at 890 to 980 °C for 10 min in the total pressure of 2 mbar. The flow rate of cyclohexane is varied between 0.2 and 0.5 g/min. The Raman results shows continuous monolayer graphene films at growth temperature of 950 °C and a flow rate of 0.5 g/min. Hall and field-effect measurements show mobilities in the range of 450–800 cm2 /V·s. The relatively low D peak intensity suggests that carrier mobility is likely limited by impurities introduced to the devices during transfer process and device fabrication.