info:eu-repo/semantics/article
Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K
Fecha
2003-12Registro en:
Xu, G. J.; Khare, S.V.; Nakayama, Koji S.; Aldao, Celso Manuel; Weaver, J. H.; Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 68; 23; 12-2003; 1-5; 235318
1098-0121
CONICET Digital
CONICET
Autor
Xu, G. J.
Khare, S.V.
Nakayama, Koji S.
Aldao, Celso Manuel
Weaver, J. H.
Resumen
The evolution and equilibrium morphology of Si(100) with 0.1 monolayer of adsorbed Cl was studied at 700 K with variable temperature scanning tunneling microscopy. Chlorine caused surface roughening with monolayer pits and regrowth islands. The aspect ratio of these features then increased with their size because of the surface-stress anisotropy. By analyzing the equilibrium feature shape as a function of size, we found that the ratio of step free energies for A- and B-type steps was Fb/Fa = 2.44 for regrowth islands and 3.33 for pits. These ratios are higher than for clean Si(100), Fb/Fa = 2.13, because the steps are destabilized.