dc.contributorhttps://orcid.org/0000-0003-0087-8991
dc.contributorhttps://orcid.org/0000-0001-8373-1535
dc.creatorOutmane, Oubram
dc.creatorRodríguez Vargas, Isaac
dc.creatorMartínez Orozco, Juan Carlos
dc.date.accessioned2019-03-19T19:19:16Z
dc.date.available2019-03-19T19:19:16Z
dc.date.created2019-03-19T19:19:16Z
dc.date.issued2014-04
dc.identifier0035-001X
dc.identifierhttp://localhost/xmlui/handle/20.500.11845/807
dc.identifierhttps://doi.org/10.48779/s1pa-hs31
dc.description.abstractThe effect of hydrostatic pressure on the refractive index changes (RIC) is studied in δ-doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structure and RIC. Our results obtained with this model show that the position and the magnitude of the linear, nonlinear and total RIC are sensitive to hydrostatic pressure and bidimensional density. The incident optical intensity has a great effect on these optical quantities.
dc.languagespa
dc.publisherSociedad Mexicana de Física
dc.relationgeneralPublic
dc.relationhttps://rmf.smf.mx/ojs/rmf/article/view/4070
dc.rightshttp://creativecommons.org/licenses/by-nc-sa/3.0/us/
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América
dc.sourceRevista Mexicana de Física Vol. 60, No. 2, pp. 161–167
dc.titleRefractive index changes in n-type delta-doped GaAs under hydrostatic pressure
dc.typeinfo:eu-repo/semantics/article


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