| dc.contributor | https://orcid.org/0000-0003-0087-8991 | |
| dc.creator | Rodríguez Vargas, Isaac | |
| dc.creator | Gaggero Sager, Luís Manuel | |
| dc.date.accessioned | 2018-08-22T14:49:51Z | |
| dc.date.available | 2018-08-22T14:49:51Z | |
| dc.date.created | 2018-08-22T14:49:51Z | |
| dc.date.issued | 2007-02-15 | |
| dc.identifier | 0921-4526 | |
| dc.identifier | http://hdl.handle.net/20.500.11845/637 | |
| dc.identifier | https://doi.org/10.48779/8zp5-2k08 | |
| dc.description.abstract | We present the electronic structure calculation of two closely p-type -doped quantum wells within the lines of the Thomas–Fermi–Dirac (TFD) theory. The distance between the impurity planes as well as the impurity density of the -doped wells is varied. The exchange effects are also considered in the present study. We have paid special attention to the split-off band and its influence on the subband hole levels. We also calculate the mobility ratio of double -doped (DDD) quantum wells in Si with respect to a single -doped (SDD) one, finding the optimum distance between the wells for maximum mobility. Our results are in a good agreement with respect to the experimental data available. | |
| dc.language | eng | |
| dc.publisher | Elsevier | |
| dc.relation | generalPublic | |
| dc.relation | https://ac.els-cdn.com/S0921452606014803/1-s2.0-S0921452606014803-main.pdf?_tid=b7a50a1a-2940-4ec8-b0a4-fbedcd23e5a5&acdnat=1534180833_239d79277fe180873d7b6e477b6b5f9a | |
| dc.rights | http://creativecommons.org/licenses/by-nc-sa/3.0/us/ | |
| dc.rights | Atribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América | |
| dc.source | Physica B: Condensed Matter Volume Vol. 389, No. 2, 15 de febrero, 2007, Pág. 227-233 | |
| dc.title | Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band | |
| dc.type | info:eu-repo/semantics/article | |
