info:eu-repo/semantics/article
Intermediate band formation in a d-doped like QW superlattices of GaAs/AlxGa1 xAs for solar cell design
Fecha
2018-03Autor
del Río de Santiago, Antonio
Martínez Orozco, Juan Carlos
Rodríguez Magdaleno, Karla Arely
Contreras Solorio, David Armando
Rodríguez Vargas, Isaac
Ungan, Fatih
Institución
Resumen
It is reported a numerical computation of the local density of states for a d-doped like QW
superlattices of AlxGa1 xAs, as a possible heterostructure that, being integrated into a solar
cell device design, can provide an intermediate band of allowed states to assist the absorption
of photons with lower energies than that of the energy gap of the solar-cell
constituent materials. This work was performed using the nearest neighbors sp3s tightbinding
model including spin. The confining potential caused by the ionized donor impurities
in d-doped impurities seeding that was obtained analytically within the lines of
the Thomas-Fermi approximation was reproduced here by the Al concentration x variation.
This potential is considered as an external perturbation in the tight-binding methodology
and it is included in the diagonal terms of the tight-binding Hamiltonian. Special attention
is paid to the width of the intermediate band caused by the change in the considered
aluminium concentration x, the inter-well distance between d-doped like QW wells and
the number of them in the superlattice. In general we can conclude that this kind of
superlattices can be suitable for intermediate band formation for possible intermediateband
solar cell design.