Nonlinear optical rectification and second and third harmonic generation in GaAs delta-FET systems under hydrostatic pressure

Abstract

The GaAs n-type delta-doped field effect transistor is proposed as a source for nonlinear optical responses such as second order rectification and second and third harmonic generation. Particular attention is paid to the effect of hydrostatic pressure on these properties, related with the pressure-induced modifications of the energy level spectrum. The description of the one-dimensional potential profile is made including Hartree and exchange and correlation effects via a Thomas–Fermi-based local density approximation. The allowed energy levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions. The results for the coefficients of nonlinear optical rectification and second and third harmonic generation are reported for several values of the hydrostatic pressure.