Pulsation regimes near static borders of optically injected semiconductor lasers

dc.contributorCampuzano Treviño, Gabriel
dc.contributorAldaya Grande, Ivan Artiz
dc.contributorCastañón Avila, Gerardo Antonio
dc.contributorArizpe, Israel de León
dc.creatorRodriguez-Martinez, Sergio Luis
dc.date.accessioned2018-05-30T15:22:57Z
dc.date.accessioned2022-10-13T22:34:43Z
dc.date.available2018-05-30T15:22:57Z
dc.date.available2022-10-13T22:34:43Z
dc.date.created2018-05-30T15:22:57Z
dc.date.issued2018-05-21
dc.identifierhttp://hdl.handle.net/11285/629951
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4228365
dc.description.abstractThe semiconductor laser injected externally by another laser (master-slave configuration) is a theoretical and experimental tool suitable for the scientific exploration of non-linear effects. Using numerical tools we have found pulsation regimes aside from period 1 and period 2. Techniques such as finding the maximum and minima of a temporal series, ratio between maxima and minima and the total harmonic distortion can be very useful to find and characterize pulsation regimes. Pulsation regimes where found near the borders of the stable synchronization region of the laser. The characterized region has a range of frequency from 150MHz to 2.78GHz with a frequency detuning from 0.98GHz to 3GHz.
dc.languageeng
dc.publisherInstituto Tecnológico y de Estudios Superiores de Monterrey
dc.rightshttp://creativecommons.org/publicdomain/zero/1.0/
dc.rightsOpen Access
dc.titlePulsation regimes near static borders of optically injected semiconductor lasers
dc.typeTesis de Maestría


Este ítem pertenece a la siguiente institución