info:eu-repo/semantics/conferenceProceedings
Zinc Doped SnO2 Electronic Structure Study by EELS
Autor
VERONICA GALLEGOS OROZCO
CARLOS ELIAS ORNELAS GUTIERREZ
WILBER ANTUNEZ FLORES
AUDEL SANTOS BELTRAN
FRANCISCO PARAGUAY DELGADO
Institución
Resumen
Tin dioxide (SnO2) is a wide bandgap semiconductor (Eg=3.6 eV at 300 K). SnO2 has recently received a large
interest because of its multiple technological applications, including gas sensors, solar cells, optoelectronic
devices, flat panel displays, architectural windows and catalysts, owing to its good optical and electrical
properties and excellent chemical and thermal stability [1]. It is well known that the enhanced dielectric
behaviors can be observed in some metal oxide nanostructures, such as SnO2 nanoparticles, Al2O3 nanobelts and
MgO nanoflowers due to their great space charge polarization process [2]. The concentration of oxygen
vacancies as native defects can influence the optical and electrical properties of the SnO2 nanoflowers like
morphology. Changes in the electronic structure and morphology of SnO2 nanoflowers like as a function of
dopants level were investigated in this work.
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