| dc.description.abstract | This work presents a comparative study between the power and efficiency losses of silicon
IGBTs semiconductors and silicon carbide MOSFETs. Through this, we seek to establish a
theoretical basis for the exchange of existing keys in drive bench at the University’s Power
and Control Electronics Group Federal of Santa Maria. This was based on parameters
provided by an permanent magnet synchronous circuit with rated voltage of 72V and 70A,
driven by a two-level three-phase frequency inverter. The study compared the efficiency of
four separate switches, two IGBTs and two MOSFETs, operating at a switching frequency
of 10kHz. The simulations and analyzes were based on a simplified circuit representing the
system of a DC voltage source, a frequency inverter and a load three-phase, implemented
using Typhoon HIL software. From this, it is possible to observe that the IGBT key, currently
used on the bench, in addition to being oversized, was not the most efficient. The key that
presented the highest efficiency was a SiC MOSFET, whose operating temperatures are
higher, but consistent with the project. In addition, there are other points on the bench,
such as the fact that the heat sink and the gate drives can be different, in order to establish
a better dimensioning for the system. | |
