Artigo de Periódico
Electrical field effects in n-type MOSFET and metal–nonmetal transition
Fecha
2002-04Registro en:
0026-2692
v. 33, n. 4
Autor
Almeida, J. Souza de
Araújo, Carlos Moysés
Pepe, Iuri Muniz
Silva, A. Ferreira da
Almeida, J. Souza de
Araújo, Carlos Moysés
Pepe, Iuri Muniz
Silva, A. Ferreira da
Institución
Resumen
The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings.