Electrical field effects in n-type MOSFET and metal–nonmetal transition

dc.creatorAlmeida, J. Souza de
dc.creatorAraújo, Carlos Moysés
dc.creatorPepe, Iuri Muniz
dc.creatorSilva, A. Ferreira da
dc.creatorAlmeida, J. Souza de
dc.creatorAraújo, Carlos Moysés
dc.creatorPepe, Iuri Muniz
dc.creatorSilva, A. Ferreira da
dc.date.accessioned2022-10-07T15:56:06Z
dc.date.available2022-10-07T15:56:06Z
dc.date.issued2002-04
dc.identifier0026-2692
dc.identifierhttp://www.repositorio.ufba.br/ri/handle/ri/7535
dc.identifierv. 33, n. 4
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/4006306
dc.description.abstractThe effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings.
dc.languageen
dc.sourcehttp://dx.doi.org/10.1016/S0026-2692(01)00134-3
dc.subjectMetal–nonmetal transition
dc.subjectElectric field
dc.subjectMetal-oxide semiconductor field effect transistors
dc.titleElectrical field effects in n-type MOSFET and metal–nonmetal transition
dc.typeArtigo de Periódico


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