ELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS

dc.creatorRIVEROS,G.
dc.creatorGÓMEZ,H
dc.creatorHENRÍQUEZ,R.
dc.creatorSSHREBLER,R.
dc.creatorCÓRDOVA,R.
dc.creatorMAROTTI,R. E.
dc.creatorDALCHIELE,E.A.
dc.date2002-12-01
dc.date.accessioned2017-03-07T16:17:09Z
dc.date.available2017-03-07T16:17:09Z
dc.identifierhttp://www.scielo.cl/scielo.php?script=sci_arttext&pid=S0366-16442002000400013
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/399027
dc.descriptionIn present work we report the one step electrodeposition of ZnX (X = Se y Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed by different techniques (SEM, EDS, XRD and optical reflectance). The composition of the ZnTe films was very close to the stoichiometric one, instead, ZnSe films presented a selenium excess that can be eliminated with a proper annealing. Optical reflectance characterization of ZnSe and ZnTe samples grown on titanium gave direct band gaps values of 2.64 eV and 2.27 eV, respectively, in agreement with those reported in the bibliography.
dc.formattext/html
dc.languageen
dc.publisherSociedad Chilena de Química
dc.sourceBoletín de la Sociedad Chilena de Química v.47 n.4 2002
dc.subjectZnSe
dc.subjectZnTe
dc.subjectsemiconductors
dc.subjectelectrodeposition
dc.titleELECTRODEPOSITION AND CHARACTERIZATION OF ZnX (X=Se, Te) SEMICONDUCTOR THIN FILMS
dc.typeArtículos de revistas


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