Model of electronic states at the Si-Si02 interface

article

Fecha

1986-07-15

Registro en:

CARRIÇO, Artur da Silva.; ELLIOTT, R. J.; BARRIO, R. A. Model of electronic states at the Si-SiO2 interface. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 872-878, 1986. Disponível em: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.34.872 Acesso: 26 mar. 2020.

2469-9969 (online), 2469-9950 (print)

https://repositorio.ufrn.br/jspui/handle/123456789/28676

https://doi.org/10.1103/PhysRevB.34.872

http://repositorioslatinoamericanos.uchile.cl/handle/2250/3964535

Autor

Carriço, Artur da Silva

Barrio, R. A.

Elliot, R. J.

Institución

Universidade Federal do Rio Grande do Norte (Brasil)

Materias

Model of electronic states

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