Model of electronic states at the Si-Si02 interface

dc.creatorCarriço, Artur da Silva
dc.creatorBarrio, R. A.
dc.creatorElliot, R. J.
dc.date.accessioned2020-03-26T20:58:03Z
dc.date.accessioned2022-10-06T13:08:53Z
dc.date.available2020-03-26T20:58:03Z
dc.date.available2022-10-06T13:08:53Z
dc.date.created2020-03-26T20:58:03Z
dc.date.issued1986-07-15
dc.identifierCARRIÇO, Artur da Silva.; ELLIOTT, R. J.; BARRIO, R. A. Model of electronic states at the Si-SiO2 interface. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 872-878, 1986. Disponível em: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.34.872 Acesso: 26 mar. 2020.
dc.identifier2469-9969 (online), 2469-9950 (print)
dc.identifierhttps://repositorio.ufrn.br/jspui/handle/123456789/28676
dc.identifierhttps://doi.org/10.1103/PhysRevB.34.872
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3964535
dc.publisherAmerican Physical Society
dc.subjectModel of electronic states
dc.titleModel of electronic states at the Si-Si02 interface
dc.typearticle


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