Artigo
Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy
Fecha
2000-08-01Registro en:
Journal of Non-Crystalline Solids, v. 272, n. 2-3, p. 174-178, 2000.
0022-3093
10.1016/S0022-3093(00)00236-2
WOS:000089190900011
2-s2.0-0345852367
Autor
Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
Universidade Federal de São Carlos (UFSCar)
Resumen
Silicon crystal exhibits a ductile regime during machining prior to the onset of fracture when appropriate cutting conditions are applied. The present study shows that the ductile regime is a result of a phase transformation which is indirectly evidenced by the amorphous phase detected in the machined surface. Transmission electron microscopy (TEM) planar view studies were successfully performed on monocrystalline silicon (1 0 0) single point diamond turned. TEM electron diffraction patterns show that the machined surface presents diffuse rings along with traces of crystalline material. This is attributed to crystalline silicon immersed in an amorphous matrix. Furthermore, only diffuse rings in the diffraction patterns of the ductile chip are detected, indicating that it is totally amorphous. © 2000 Elsevier Science B.V. All rights reserved.