Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

Trabalho apresentado em evento

Fecha

1999-12-01

Registro en:

SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings, v. 1, p. 267-270.

http://hdl.handle.net/11449/65955

10.1109/IMOC.1999.867106

2-s2.0-0033295721

http://repositorioslatinoamericanos.uchile.cl/handle/2250/3915806

Autor

Universidade Estadual Paulista (Unesp)

Institución

Universidade Paulista Júlio de Mesquita Filho (Brasil)

Resumen

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

Materias

Front end receivers

Gilbert cell mixers

Low noise amplifiers

Pseudomorphic high electron mobility transistors

Amplifiers (electronic)

Buffer circuits

Computer simulation

Electric network topology

High electron mobility transistors

Mixer circuits

Monolithic microwave integrated circuits

Semiconducting gallium arsenide

Signal receivers

Integrated circuit layout

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