Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:19:49Z
dc.date.accessioned2022-10-05T17:40:05Z
dc.date.available2014-05-27T11:19:49Z
dc.date.available2022-10-05T17:40:05Z
dc.date.created2014-05-27T11:19:49Z
dc.date.issued1999-12-01
dc.identifierSBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings, v. 1, p. 267-270.
dc.identifierhttp://hdl.handle.net/11449/65955
dc.identifier10.1109/IMOC.1999.867106
dc.identifier2-s2.0-0033295721
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3915806
dc.description.abstractThe design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.
dc.languageeng
dc.relationSBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings
dc.rightsAcesso aberto
dc.sourceScopus
dc.subjectFront end receivers
dc.subjectGilbert cell mixers
dc.subjectLow noise amplifiers
dc.subjectPseudomorphic high electron mobility transistors
dc.subjectAmplifiers (electronic)
dc.subjectBuffer circuits
dc.subjectComputer simulation
dc.subjectElectric network topology
dc.subjectHigh electron mobility transistors
dc.subjectMixer circuits
dc.subjectMonolithic microwave integrated circuits
dc.subjectSemiconducting gallium arsenide
dc.subjectSignal receivers
dc.subjectIntegrated circuit layout
dc.titleDesign of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology
dc.typeTrabalho apresentado em evento


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