Artigo
Nature of defects for bismuth layered thin films grown on Pt electrodes
Fecha
2007-02-19Registro en:
Applied Physics Letters. Melville: Amer Inst Physics, v. 90, n. 8, 3 p., 2007.
0003-6951
10.1063/1.2472527
WOS:000244420600065
WOS000244420600065.pdf
Autor
Universidade Estadual Paulista (Unesp)
Georgia Inst Technol
Resumen
The authors investigated the influence of defects on the piezoelectric and dielectric properties of Bi4Ti3O12 (BIT), SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi144) thin films by x-ray photoemission spectroscopy measurements. In the SBTi film, Sr which is a nonpolarizable ion restricting the movement of Ti4+ ions and thus leads to a low piezoresponse. Meanwhile, the oxygen environment is quite different in the BIT and CBTi144 films exhibiting excellent piezoelectric properties. The piezoelectric coefficient and the dielectric behavior were larger for a-b axis oriented than for c axis-oriented films due to the defects created during the films crystallization. (c) 2007 American Institute of Physics.