Nature of defects for bismuth layered thin films grown on Pt electrodes

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorGeorgia Inst Technol
dc.date.accessioned2014-05-20T15:21:09Z
dc.date.accessioned2022-10-05T16:09:24Z
dc.date.available2014-05-20T15:21:09Z
dc.date.available2022-10-05T16:09:24Z
dc.date.created2014-05-20T15:21:09Z
dc.date.issued2007-02-19
dc.identifierApplied Physics Letters. Melville: Amer Inst Physics, v. 90, n. 8, 3 p., 2007.
dc.identifier0003-6951
dc.identifierhttp://hdl.handle.net/11449/32327
dc.identifier10.1063/1.2472527
dc.identifierWOS:000244420600065
dc.identifierWOS000244420600065.pdf
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3904909
dc.description.abstractThe authors investigated the influence of defects on the piezoelectric and dielectric properties of Bi4Ti3O12 (BIT), SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi144) thin films by x-ray photoemission spectroscopy measurements. In the SBTi film, Sr which is a nonpolarizable ion restricting the movement of Ti4+ ions and thus leads to a low piezoresponse. Meanwhile, the oxygen environment is quite different in the BIT and CBTi144 films exhibiting excellent piezoelectric properties. The piezoelectric coefficient and the dielectric behavior were larger for a-b axis oriented than for c axis-oriented films due to the defects created during the films crystallization. (c) 2007 American Institute of Physics.
dc.languageeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relationApplied Physics Letters
dc.relation3.495
dc.relation1,382
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titleNature of defects for bismuth layered thin films grown on Pt electrodes
dc.typeArtigo


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