Artigo
SUBSTITUTIONAL DONOR RELATED STATES AND AU/GE/NI CONTACTS TO ALXGA1-XAS
Fecha
1993-11-01Registro en:
Philosophical Magazine B-physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties. London: Taylor & Francis Ltd, v. 68, n. 5, p. 727-735, 1993.
0141-8637
10.1080/13642819308220155
WOS:A1993MF61600012
Autor
Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
Resumen
Current-voltage measurements performed on bulk AlxGa1-xAs equipped with Au/Ge/Ni contacts reveal surprising deviations from ohmic behaviour when the temperature is lowered to that of liquid nitrogen. Significant differences are observed between samples with x = 0.3 (direct band-gap material) and x = 0.5 (indirect band-gap material). The dominant states of the donor atoms Si (doping) or Ge are found to be responsible for such behaviour. Evidence for the existence of an effective-mass X-valley metastable state is also presented.