SUBSTITUTIONAL DONOR RELATED STATES AND AU/GE/NI CONTACTS TO ALXGA1-XAS

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:20:08Z
dc.date.accessioned2022-10-05T16:04:04Z
dc.date.available2014-05-20T15:20:08Z
dc.date.available2022-10-05T16:04:04Z
dc.date.created2014-05-20T15:20:08Z
dc.date.issued1993-11-01
dc.identifierPhilosophical Magazine B-physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties. London: Taylor & Francis Ltd, v. 68, n. 5, p. 727-735, 1993.
dc.identifier0141-8637
dc.identifierhttp://hdl.handle.net/11449/31484
dc.identifier10.1080/13642819308220155
dc.identifierWOS:A1993MF61600012
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/3904236
dc.description.abstractCurrent-voltage measurements performed on bulk AlxGa1-xAs equipped with Au/Ge/Ni contacts reveal surprising deviations from ohmic behaviour when the temperature is lowered to that of liquid nitrogen. Significant differences are observed between samples with x = 0.3 (direct band-gap material) and x = 0.5 (indirect band-gap material). The dominant states of the donor atoms Si (doping) or Ge are found to be responsible for such behaviour. Evidence for the existence of an effective-mass X-valley metastable state is also presented.
dc.languageeng
dc.publisherTaylor & Francis Ltd
dc.relationPhilosophical Magazine B: Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titleSUBSTITUTIONAL DONOR RELATED STATES AND AU/GE/NI CONTACTS TO ALXGA1-XAS
dc.typeArtigo


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