Transmission Electron Microscopy study of a GaN thin film grown on Al2O3 by MOCVD

dc.date.accessioned2013-01-16T13:33:42Z
dc.date.available2013-01-16T13:33:42Z
dc.date.created2013-01-16T13:33:42Z
dc.date.issued2013-01-16
dc.identifierhttp://www.repositoriodigital.ipn.mx/handle/123456789/11216
dc.publisherInstituto Politecnico Nacional
dc.subjectthin films Al2O3
dc.titleTransmission Electron Microscopy study of a GaN thin film grown on Al2O3 by MOCVD
dc.typeArticle


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