Influence of hexagonal-shaped surface pits on optical and structural properties of GaN epilayers grown on Al2O3 substrates by MOCVD

dc.date.accessioned2013-01-16T11:28:20Z
dc.date.available2013-01-16T11:28:20Z
dc.date.created2013-01-16T11:28:20Z
dc.date.issued2013-01-16
dc.identifierhttp://www.repositoriodigital.ipn.mx/handle/123456789/10968
dc.publisherInstituto Politecnico Nacional
dc.titleInfluence of hexagonal-shaped surface pits on optical and structural properties of GaN epilayers grown on Al2O3 substrates by MOCVD
dc.typeArticle


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