| dc.description.abstract | Differences have been foundon the growth rate of epitaxial layers grown simultaneously on semi-insulating andP
andN type (1 0 0) GaAs substrates from the same Ga–As liquidsolution. The layers were grown by LPE at 786 C using
an initial supercooling of 15 C anda cooling rate of 0.5 C/min. The thickness of the grown layers was measured, under
an optical microscope, in cleavedcross-sections etchedin a FeCl3–HCl solution. To fit the thickness-growth time data
to the theoretical expression used for diffusion-limited growth it is necessary to use different initial supercoolings for the
layers grown in each substrate, in spite that those layers were grown at the same time, from the same solution and
therefore under exactly the same conditions.
r 2004 Elsevier B.V. All rights reserved. | |
