dc.creatorDiaz Reyes, Joel
dc.date.accessioned2012-11-27T16:43:42Z
dc.date.available2012-11-27T16:43:42Z
dc.date.created2012-11-27T16:43:42Z
dc.date.issued2012-11-27
dc.identifierhttp://www.repositoriodigital.ipn.mx/handle/123456789/8589
dc.description.abstractW03 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains that W03 presents mainly monoclinic crystalline phase. The chemical stoichiometry is obtained by X-ray Photoelectron Spectroscopy ( XPS). TheIR spec­ trum of the as-grown W03 presents broad peaks in the range of 1100 to 3600 em - '. A broad band in the 2200 to 3600 cm- 1 region and the peaks sited at 1645 and 1432 em - 1 a re well resolved. which a re originated from moisture and are assigned to v( OI-1 ) and 8(01-I) modes of adsorbed water and the corre­ sponding tungsten oxide vibrations are in infrared region from 400 to 1453 em-' and around 3492 em 1 • which correspond to tungsten-oxygen (W-0) stretching, bending and lattice modes. The Raman spec­ trum shows intense peaks a t 80 I. 710. 262 and 61 em-' that are typical Raman peaks of crystalline W03 (m-phase) that correspond to stretching vibrations of the br i dging oxygen, which are assigned to W-0 stretching (v) and W-0 bending (8) modes. respectively. By transmittance measurements obtains that the W03 band gap can be varied from 2.92 to 3.13 eV in the investigated annealing temperature range.
dc.languageen
dc.subjectCompound semiconductors Hot Filament Metal Oxide Deposition Novel Materials and Technological Advances forele ([rochromics Semiconductors growth W03 se miconductors
dc.titlePhysical properties characterization ofW03 films grown by hot-filament metal oxide deposition
dc.typeArticle


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