Structural properties of undoped and doped cubic GaN grown on SiC(001)

dc.creatorMartínez-Guerrero, Esteban
dc.creatorBellet-Amalric, E.
dc.creatorMartinet, L.
dc.creatorFeuillet, G.
dc.creatorDaudin, B.
dc.date.accessioned2013-06-14T14:51:07Z
dc.date.available2013-06-14T14:51:07Z
dc.date.created2013-06-14T14:51:07Z
dc.date.issued2002-04-15
dc.identifierE. Martinez-Guerrero, E. Bellet-Amalric, L. Martinet, G. Feuillet, and B. Daudin, Structural properties of undoped and doped cubic GaN grown on SiC(001), JOURNAL OF APPLIED PHYSICS, Vol 91, N. 8, 4983-4987, (2002)
dc.identifier0021-8979
dc.identifierhttp://hdl.handle.net/11117/654
dc.languageeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relationJOURNAL OF APPLIED PHYSICS;Vol 91, N. 8
dc.rightshttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdf
dc.subjectCubic GaN
dc.subjectSurface Morphology
dc.subjectStructural Properties
dc.subjectSIMS
dc.subjectTEM
dc.subjectX-Ray Diffraction
dc.titleStructural properties of undoped and doped cubic GaN grown on SiC(001)
dc.typeinfo:eu-repo/semantics/article


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