Random Telegraph Signal Noise in Advanced High Performance and Memory Devices

dc.contributorImec
dc.contributorKatholieke Univ Leuven
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorLiverpool John Moores Univ
dc.contributorMicrosyst & Terahertz Res Ctr
dc.contributorUniv Ghent
dc.date.accessioned2018-11-26T17:16:25Z
dc.date.available2018-11-26T17:16:25Z
dc.date.created2018-11-26T17:16:25Z
dc.date.issued2016-01-01
dc.identifier2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 6 p., 2016.
dc.identifierhttp://hdl.handle.net/11449/162374
dc.identifierWOS:000392469000004
dc.description.abstractRandom Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.
dc.languageeng
dc.publisherIeee
dc.relation2016 31st Symposium On Microelectronics Technology And Devices (sbmicro)
dc.rightsAcesso aberto
dc.sourceWeb of Science
dc.subjectrandom telegraph signal
dc.subjecttime lag plot
dc.subjectReRAMs
dc.subjectlow frequency noise
dc.subjectinterface traps
dc.subjectUTBB SOI
dc.subjectoxide traps
dc.titleRandom Telegraph Signal Noise in Advanced High Performance and Memory Devices
dc.typeActas de congresos


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