The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorCEA
dc.contributorUniv Grenoble Alpes
dc.date.accessioned2018-11-26T15:47:36Z
dc.date.available2018-11-26T15:47:36Z
dc.date.created2018-11-26T15:47:36Z
dc.date.issued2017-01-01
dc.identifier2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands. New York: Ieee, 4 p., 2017.
dc.identifierhttp://hdl.handle.net/11449/160134
dc.identifierWOS:000426524500053
dc.identifier0496909595465696
dc.identifier0000-0002-0886-7798
dc.description.abstractthe goal of this work is analyze for the first time the low-energy proton irradiation effects on p and n- channel SOI Omega - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.
dc.languageeng
dc.publisherIeee
dc.relation2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands
dc.rightsAcesso aberto
dc.sourceWeb of Science
dc.subjectNanowire
dc.subjectproton irradiation
dc.subjectback leakage current
dc.subjectoxide charger
dc.titleThe influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
dc.typeActas de congresos


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