Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-11-26T15:37:53Z
dc.date.available2018-11-26T15:37:53Z
dc.date.created2018-11-26T15:37:53Z
dc.date.issued2016-01-01
dc.identifier2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016.
dc.identifierhttp://hdl.handle.net/11449/159310
dc.identifierWOS:000392469000019
dc.identifier0496909595465696
dc.identifier0000-0002-0886-7798
dc.description.abstractIn this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.
dc.languageeng
dc.publisherIeee
dc.relation2016 31st Symposium On Microelectronics Technology And Devices (sbmicro)
dc.rightsAcesso aberto
dc.sourceWeb of Science
dc.subjectSOI
dc.subjectUltra Thin Body and Buried Oxide
dc.subjectSpacer
dc.subjectself-aligned, underlap
dc.titleInfluence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
dc.typeActas de congresos


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