dc.creator | Aragón, F. H. | |
dc.creator | Coaquira, J. A. H. | |
dc.creator | Villegas Lelovsky, L. | |
dc.creator | Silva, S. W. da | |
dc.creator | Cesar, D. F. | |
dc.creator | Nagamine, L. C. | |
dc.creator | Cohen, R. | |
dc.creator | Menéndez Proupin, Eduardo | |
dc.creator | Morais, P. C. | |
dc.date.accessioned | 2015-08-25T02:27:44Z | |
dc.date.available | 2015-08-25T02:27:44Z | |
dc.date.created | 2015-08-25T02:27:44Z | |
dc.date.issued | 2015 | |
dc.identifier | Journal of Physics - Condensed Matter. Volumen: 27 Número: 9 | |
dc.identifier | DOI: 10.1088/0953-8984/27/9/095301 | |
dc.identifier | https://repositorio.uchile.cl/handle/2250/133089 | |
dc.description.abstract | In this study, we report on the structural and hyperfine properties of Al-doped SnO2 nanoparticles synthesized by a polymer precursor method. The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with decreasing of the mean crystallite size as the Al content. A systematic study of the unit cell, as well as the vicinity of the interstitial position show strong evidence of two doping regimes in the rutile-type structure of SnO2. Below 7.5 mol% doping a dominant substitutional solution of Al+3 and Sn4+-ions is determined. However, the occupation of both substitutional and interstitial sites is determined above 7.5 mol% doping. These findings are in good agreement with theoretical ab initio calculations. | |
dc.language | en | |
dc.publisher | IOP Publishing | |
dc.rights | http://creativecommons.org/licenses/by-nc-nd/3.0/cl/ | |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 Chile | |
dc.subject | Doped oxide semiconductor | |
dc.subject | Substitutional position | |
dc.subject | Interstitial position | |
dc.title | Evolution of the doping regimes in the Al-doped SnO2 nanoparticles prepared by a polymer precursor method | |
dc.type | Artículo de revista | |