dc.creatorAragón, F. H.
dc.creatorCoaquira, J. A. H.
dc.creatorVillegas Lelovsky, L.
dc.creatorSilva, S. W. da
dc.creatorCesar, D. F.
dc.creatorNagamine, L. C.
dc.creatorCohen, R.
dc.creatorMenéndez Proupin, Eduardo
dc.creatorMorais, P. C.
dc.date.accessioned2015-08-25T02:27:44Z
dc.date.available2015-08-25T02:27:44Z
dc.date.created2015-08-25T02:27:44Z
dc.date.issued2015
dc.identifierJournal of Physics - Condensed Matter. Volumen: 27 Número: 9
dc.identifierDOI: 10.1088/0953-8984/27/9/095301
dc.identifierhttps://repositorio.uchile.cl/handle/2250/133089
dc.description.abstractIn this study, we report on the structural and hyperfine properties of Al-doped SnO2 nanoparticles synthesized by a polymer precursor method. The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with decreasing of the mean crystallite size as the Al content. A systematic study of the unit cell, as well as the vicinity of the interstitial position show strong evidence of two doping regimes in the rutile-type structure of SnO2. Below 7.5 mol% doping a dominant substitutional solution of Al+3 and Sn4+-ions is determined. However, the occupation of both substitutional and interstitial sites is determined above 7.5 mol% doping. These findings are in good agreement with theoretical ab initio calculations.
dc.languageen
dc.publisherIOP Publishing
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Chile
dc.subjectDoped oxide semiconductor
dc.subjectSubstitutional position
dc.subjectInterstitial position
dc.titleEvolution of the doping regimes in the Al-doped SnO2 nanoparticles prepared by a polymer precursor method
dc.typeArtículo de revista


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