Artículo de revista
Voltage-controlled gating in a large conductance Ca2+-sensitive K(+)channel (hslo)
Fecha
1997-05-13Registro en:
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA Volume: 94 Issue: 10 Pages: 5427-5431 Published: MAY 13 1997
0027-8424
Autor
Stefani, Enrico
Ottolia, M.
Noceti, F.
Olcese, Riccardo
Wallner, Martín
Latorre, Ramón
Toro, Ligia
Institución
Resumen
Large conductance calcium- and voltage-sensitive K+ (MaxiK) channels share properties of voltage- and ligand-gated ion channels. In voltage-gated channels, membrane depolarization promotes the displacement of charged residues contained in the voltage sensor (S4 region) inducing gating currents and pore opening. In MaxiK channels, both voltage and micromolar internal Ca2+ favor pore opening. We demonstrate the presence of voltage sensor rearrangements with voltage (gating currents) whose movement and associated pare opening is triggered by voltage and facilitated by micromolar internal Ca2+ concentration. In contrast to other voltage-gated channels, in MaxiK channels there is charge movement at potentials where the pore is open and the total charge per channel is 4-5 elementary charges.