dc.contributor | NANOTECH | |
dc.creator | Dussan, Anderson | |
dc.creator | Mesa, Fredy | |
dc.date.accessioned | 2016-11-02T20:39:57Z | |
dc.date.available | 2016-11-02T20:39:57Z | |
dc.date.created | 2016-11-02T20:39:57Z | |
dc.date.issued | 2014 | |
dc.identifier | http://repository.urosario.edu.co/handle/10336/12549 | |
dc.description.abstract | Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu3BiS2 and Cu2ZnSnSe4compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(EF) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material. | |
dc.language | spa | |
dc.rights | http://creativecommons.org/licenses/by-nc-nd/2.5/co/ | |
dc.rights | info:eu-repo/semantics/openAccess | |
dc.rights | Abierto (Texto completo) | |
dc.rights | Atribución-NoComercial-SinDerivadas 2.5 Colombia | |
dc.rights | EL AUTOR, manifiesta que la obra objeto de la presente autorización es original y la realizó sin violar o usurpar derechos de autor de terceros, por lo tanto la obra es de exclusiva autoría y tiene la titularidad sobre la misma.
PARGRAFO: En caso de presentarse cualquier reclamación o acción por parte de un tercero en cuanto a los derechos de autor sobre la obra en cuestión, EL AUTOR, asumirá toda la responsabilidad, y saldrá en defensa de los derechos aquí autorizados; para todos los efectos la universidad actúa como un tercero de buena fe.
EL AUTOR, autoriza a LA UNIVERSIDAD DEL ROSARIO, para que en los términos establecidos en la Ley 23 de 1982, Ley 44 de 1993, Decisión andina 351 de 1993, Decreto 460 de 1995 y demás normas generales sobre la materia, utilice y use la obra objeto de la presente autorización.
--------------------------------------
POLITICA DE TRATAMIENTO DE DATOS PERSONALES. Declaro que autorizo previa y de forma informada el tratamiento de mis datos personales por parte de LA UNIVERSIDAD DEL ROSARIO para fines académicos y en aplicación de convenios con terceros o servicios conexos con actividades propias de la academia, con estricto cumplimiento de los principios de ley. Para el correcto ejercicio de mi derecho de habeas data cuento con la cuenta de correo habeasdata@urosario.edu.co, donde previa identificación podré solicitar la consulta, corrección y supresión de mis datos. | |
dc.source | instname:Universidad del Rosario | |
dc.source | reponame:Repositorio Institucional EdocUR | |
dc.source | Arredondo CA, Gordillo G (2010) Photoconductive and electrical transport properties of AgInSe2 thin films prepared by co-evaporation. Physica B: Condensed Matter 405:3694-3699 doi: 10.1016/j.physb.2010.05.068 | |
dc.source | Chen T, Huang Y, Dasgupta A, Luysberg M, Houben L et al. (2012) Microcrystalline silicon carbide window layers in thin film silicon solar cells. Solar Energy Materials and Solar Cells 98:370-378 doi: 10.1016/j.solmat.2011.11.039 | |
dc.source | Chen X, Lin Q, Ni J, Zhang D, Sun J et al. (2011) Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells. Thin Solid Films 520:1263- 1267 doi: 10.1016/j.tsf.2011.04.199 | |
dc.source | Dalvi A, Reddy NP, Agarwal SC (2012) The Meyer-Neldel rule and hopping conduction. Solid State Communications 152:612-615 doi: 10.1016/j.ssc.2012.01.018 | |
dc.source | Dantus C, Rusu RS, Rusu GI (2011) On the mechanism of electronic transport in polycrystalline CdO thin films. Superlattices and Microstructures 50:303-310 doi: 10.1016/j. spmi.2011.07.008 | |
dc.source | Dussan A, Buitrago RH (2005) Transport mechanism in lightly doped hydrogenated microcrystalline silicon thin films. Journal of Applied Physics 97:043711 doi: 10.1063/1.1848193 | |
dc.source | Dussan A, Buitrago RH, Koropecki RR (2008) Microcrystalline silicon thin films: A review of physical properties. Microelectronics Journal 39:1292-1295 doi: 10.1016/j.mejo.2008.01.019 | |
dc.source | Dussan A, Mesa F, Botero M, Gordillo G (2009) Electrical and optical properties of thin films with a SnS2 – Bi2S3 alloy grown by sulphurization. Journal of Physics: Conference Series 167:012018 doi: 10.1088/1742- 6596/167/1/012018 | |
dc.source | Dussan A, Mesa F, Botero M, Gordillo G (2012) Electrical and optical properties of thin films with a SnS2 –Bi2S3 alloy grown by sulphurization. Journal of Physics: Conference Series 167:012018 doi: 10.1088/1742- 6596/167/1/012018 | |
dc.source | Eginligil M, Zhang W, Kalitsov A, Lu X, Yang H (2012) Tunneling behavior of bismuth telluride nanoplates in electrical transport. Chemical Physics Letters 546:125-128 doi: 10.1016/j.cplett.2012.07.068 | |
dc.source | Huang X, Wu C, Lu H, Ren F, Chen D et al. (2013) Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium– zinc oxide thin film transistors. Solid-State Electronics 86:41-44 doi: 10.1016/j.sse.2013.04.025 | |
dc.source | Kang DW, Kwon JY, Shim J, Lee HM, Han MK (2012) Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells. Solar Energy Materials and Solar Cells 105:317-321 doi: 10.1016/j.solmat.2012.06.041 | |
dc.source | Kim SJ, Gunduz B, Yoon DH, Kim HJ, Al-Ghamdic A et al. (2013) Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors. Sensors and Actuators A: Physical 193:1-12 doi: 10.1016/j.sna.2013.01.002 | |
dc.source | Koval Y, Lazareva I, Müller P (2011) Coulomb gap variable range hopping in graphitized polymer surfaces. Synthetic Metals 161:528-534 doi: 10.1016/j.synthmet.2011.01.007 | |
dc.source | Li L, Chung KS, Jang J (2012) Carrier concentration dependent bimolecular recombination coefficient model in two dimensional hopping system. Synthetic Metals 162:702-704 doi: 10.1016/j.synthmet.2012.02.013 | |
dc.source | Lisunov KG, Guk M, Nateprov A, Levcenko S, Tezlevan V (2013) Features of the acceptor band and properties of localized carriers from studies of the variable-range hopping conduction in single crystals of p-Cu2ZnSnS4. | |
dc.source | Mesa F, Dussan A, Gordillo G (2009) Evidence of trapping levels and photoelectric properties of Cu3BiS2 thin films. Physica B: Condensed Matter 404:5227-5230 doi: 10.1016/j.physb.2009.08.302 | |
dc.source | Miller JB, Ashok T, Lee S, Broitmanet E (2012) Zinc oxidebased thin film functional layers for chemiresistive sensors. Thin Solid Films 520:6669-6676 doi: 10.1016/j. tsf.2012.07.016 | |
dc.source | Misra SK, Andronenkoa SI, Asthana S, Bahadur D (2010) A variable temperature EPR study of the manganites (La1/3Sm2/3) 2/3SrxBa0.33−xMnO3 (x=0.0, 0.1, 0.2, 0.33): Small polaronhopping conductivity and Griffiths phase. Journal of Magnetism and Magnetic Materials 322:2902-2907 doi: 10.1016/j.jmmm.2010.05.003 | |
dc.source | Mott NF (1969) Philos. Mag 19:835 | |
dc.source | Morthekai P, Thomas J, Pandian MS, Balaram V, Singhvi AK (2012) Variable range hopping mechanism in bandtail states of feldspars: A time-resolved IRSL study. Radiation Measurements 47:857-863 | |
dc.source | Phan BT, Choic T, Romanenko A, Lee J (2012) Hopping and trap controlled conduction in Cr-doped SrTiO3 thin films. Solid-State Electronics 75:43-47 doi: 10.1016/j. sse.2012.05.007 | |
dc.source | Serin N, Yildiz A, Alsaç AA, Serinet T (2011) Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films. Thin Solid Films 519:2302-2307 doi: 10.1016/j. tsf.20 | |
dc.source | Shen HP, Zhao CY (2013) Analytical considerations of light transport in nanostructured homogeneous/ inhomogeneous thin films. Thin Solid Films 542:204-209 doi: 10.1016/j.tsf.2013.06.066 | |
dc.source | Thamilselvan M, Premnazeer K, Mangalaraj D, Narayandass SK (2003) Field and temperature-dependent electronic transport parameters of amorphous and polycrystalline GaSe thin films. Physica B: Condensed Matter 337:404-412 doi: 10.1016/S0921-4526(03)00444-7 | |
dc.source | Yadav AA, Masumdar EU (2010) Optical and electrical transport properties of spray deposited CdS1−xSex thin films. Journal of Alloys and Compounds 505:787-792 doi: 10.1016/j.jallcom.2010.06.141 | |
dc.subject | Semiconductores; transporte hopping; modelo difusional. | |
dc.title | Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas | |
dc.type | workingPaper | |