Artículos de revistas
10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells
Fecha
2017-01Registro en:
Ochoa, M.; Yaccuzzi, Exequiel Eliseo; Espinet González, P.; Barrera, Marcela Patricia; Barrigón, E.; et al.; 10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells; Elsevier Science; Solar Energy Materials And Solar Cells; 159; 1-2017; 576-582
0927-0248
CONICET Digital
CONICET
Autor
Ochoa, M.
Yaccuzzi, Exequiel Eliseo
Espinet González, P.
Barrera, Marcela Patricia
Barrigón, E.
Ibarra, María Luján
Contreras, Yedileth
Garcia, Javier
López, E.
Alurralde, M.
Algora, C.
Godfrin, E.
Rey Stolle, I.
Plá, J.
Resumen
In this paper, the experimental results of a 10 MeV proton irradiation on concentrator GaInP/GaAs/Ge lattice-matched triple-junction solar cells and their corresponding subcells are examined. Electro-optical characterization such as external quantum efficiency, light and dark I-V measurements, is performed together with theoretical device modeling in order to guide the analysis of the degradation behavior. The GaInP (on Ge) and Ge cell showed a power loss between beginning of life and end of life of about 4% while the GaInP/GaAs/Ge and GaAs solar cells exhibited the highest damage measured of 12% and 10%, respectively for an irradiation fluence equivalent to an 8-years satellite mission in Low Earth Orbit. The results from single-junction solar cells correlate well with those of triple-junction solar cells. The performance of concentrator solar cells structures is similar to that of traditional space-targeted designs reported in literature suggesting that no special changes may be required to use triple junction concentrator solar cells in space.